AUIRF7313Q parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

AUIRF7313Q

Description:

MOSFET 2N-CH 30V 6.5A 8SOIC

Stock:

19153

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

6.9A

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

33nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

755pF @ 25V

On resistance (maximum) for different Ids and Vgs

29 mΩ @ 6.9A,10V

Power - maximum

2.4W

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

pipe

series

HEXFET®

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载AUIRF7313Q.pdf

AUIRF7313Q（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19153,Price reference "real-time change" China/Hongkong。 AUIRF7313Q package/specs, Download AUIRF7313Q、Datasheet。